Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP22NF03L
RFQ
VIEW
RFQ
938
In-stock
STMicroelectronics MOSFET N-CH 30V 22A TO-220 STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 30V 22A (Tc) 50 mOhm @ 11A, 10V 1V @ 250µA 9nC @ 5V 330pF @ 25V 5V, 10V ±15V
C3M0120100K
RFQ
VIEW
RFQ
1,903
In-stock
Cree/Wolfspeed MOSFET N-CH 1000V 22A TO247-4L C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 83W (Tc) N-Channel - 1000V 22A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V 15V ±15V