Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STF30N65M5
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2,765
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STMicroelectronics MOSFET N-CH 650V 22A TO-220FP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 22A (Tc) 139 mOhm @ 11A, 10V 5V @ 250µA 64nC @ 10V 2880pF @ 100V 10V ±25V
TK22A10N1,S4X
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RFQ
1,466
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
STF31N65M5
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RFQ
2,300
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STMicroelectronics MOSFET N-CH 650V 22A TO-220FP MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 22A (Tc) 148 mOhm @ 11A, 10V 5V @ 250µA 45nC @ 10V 816pF @ 100V 10V ±25V
STFI28N60M2
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RFQ
3,297
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK-FP MDmesh™ II Plus Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel - 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V
STFI31N65M5
RFQ
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RFQ
1,964
In-stock
STMicroelectronics MOSFET N CH 650V 22A I2PAKFP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel - 650V 22A (Tc) 148 mOhm @ 11A, 10V 5V @ 250µA 45nC @ 10V 1865pF @ 100V 10V ±25V