- Manufacture :
- Series :
- Technology :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,575
In-stock
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Infineon Technologies | MOSFET N-CH 600V 22A TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4 | 110W (Tc) | N-Channel | - | 600V | 22A (Tc) | 99 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | 10V | ±20V | |||
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VIEW |
1,903
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1000V 22A TO247-4L | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 83W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | 15V | ±15V | |||
