Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ22N60P
RFQ
VIEW
RFQ
2,502
In-stock
IXYS MOSFET N-CH 600V 22A TO-3P PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 400W (Tc) N-Channel - 600V 22A (Tc) 350 mOhm @ 11A, 10V 5.5V @ 250µA 62nC @ 10V 3600pF @ 25V 10V ±30V
SSH22N50A
RFQ
VIEW
RFQ
2,200
In-stock
ON Semiconductor MOSFET N-CH 500V 22A TO-3P - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 278W (Tc) N-Channel - 500V 22A (Tc) 250 mOhm @ 11A, 10V 4V @ 250µA 236nC @ 10V 5120pF @ 25V 10V ±30V
IXFQ22N60P3
RFQ
VIEW
RFQ
3,365
In-stock
IXYS MOSFET N-CH 600V 22A TO3P HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 500W (Tc) N-Channel - 600V 22A (Tc) 360 mOhm @ 11A, 10V 5V @ 1.5mA 38nC @ 10V 2600pF @ 25V 10V ±30V
IXTQ22N50P
RFQ
VIEW
RFQ
899
In-stock
IXYS MOSFET N-CH 500V 22A TO-3P PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 10V ±30V