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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,662
In-stock
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ON Semiconductor | MOSFET N-CH 20V 2.9A CHIPFET | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 910mW (Tj) | N-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Tj) | 80 mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 4nC @ 4.5V | 300pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,943
In-stock
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ON Semiconductor | MOSFET N-CH 20V 2.9A CHIPFET | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 910mW (Tj) | N-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Tj) | 80 mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 4nC @ 4.5V | 300pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,944
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3nC @ 7V | 340pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,015
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
VIEW |
699
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,767
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | SIPMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,652
In-stock
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Vishay Siliconix | MOSFET N-CHAN 20V SOT23 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 710mW (Ta) | N-Channel | - | 20V | 2.9A (Tj) | 57 mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5nC @ 4.5V | - | 2.5V, 4.5V | ±8V | |||
|
VIEW |
3,708
In-stock
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Vishay Siliconix | MOSFET N-CHAN 20V SOT23 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 710mW (Ta) | N-Channel | - | 20V | 2.9A (Tj) | 57 mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5nC @ 4.5V | - | 2.5V, 4.5V | ±8V | |||
|
VIEW |
1,364
In-stock
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Vishay Siliconix | MOSFET N-CHAN 20V SOT23 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 710mW (Ta) | N-Channel | - | 20V | 2.9A (Tj) | 57 mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5nC @ 4.5V | - | 2.5V, 4.5V | ±8V |