Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT9M100B
RFQ
VIEW
RFQ
1,799
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 335W (Tc) N-Channel - 1000V 9A (Tc) 1.4 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2605pF @ 25V 10V ±30V
APT9F100B
RFQ
VIEW
RFQ
2,250
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 337W (Tc) N-Channel - 1000V 9A (Tc) 1.6 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2606pF @ 25V 10V ±30V
APT1201R4BFLLG
RFQ
VIEW
RFQ
765
In-stock
Microsemi Corporation MOSFET N-CH 1200V 9A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 1200V 9A (Tc) 1.5 Ohm @ 4.5A, 10V 5V @ 1mA 75nC @ 10V 2030pF @ 25V 10V ±30V
APT9F100S
RFQ
VIEW
RFQ
1,165
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A D3PAK POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 337W (Tc) N-Channel - 1000V 9A (Tc) 1.6 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2606pF @ 25V 10V ±30V
R6009KNJTL
RFQ
VIEW
RFQ
1,226
In-stock
Rohm Semiconductor MOSFET N-CHANNEL 600V 9A TO263 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 94W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V
R6009KNJTL
RFQ
VIEW
RFQ
3,006
In-stock
Rohm Semiconductor MOSFET N-CHANNEL 600V 9A TO263 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 94W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V
R6009KNJTL
RFQ
VIEW
RFQ
1,661
In-stock
Rohm Semiconductor MOSFET N-CHANNEL 600V 9A TO263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 94W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V
R6009KNX
RFQ
VIEW
RFQ
3,028
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 48W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V