- Manufacture :
- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,799
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 335W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.4 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2605pF @ 25V | 10V | ±30V | ||||
VIEW |
2,250
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 337W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.6 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | 10V | ±30V | ||||
VIEW |
765
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 9A TO-247 | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 1200V | 9A (Tc) | 1.5 Ohm @ 4.5A, 10V | 5V @ 1mA | 75nC @ 10V | 2030pF @ 25V | 10V | ±30V | ||||
VIEW |
1,165
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 9A D3PAK | POWER MOS 8™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 337W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.6 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | 10V | ±30V | ||||
VIEW |
1,226
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 9A TO263 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 94W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
VIEW |
3,006
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 9A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 94W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
VIEW |
1,661
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 9A TO263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 94W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
VIEW |
3,028
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 9A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 48W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V |