- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,796
In-stock
|
IXYS | MOSFET N-CH 800V 9A TO-268 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 180W (Tc) | N-Channel | - | 800V | 9A (Tc) | 1.1 Ohm @ 500mA, 10V | 5V @ 2.5mA | 56nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,165
In-stock
|
Microsemi Corporation | MOSFET N-CH 1000V 9A D3PAK | POWER MOS 8™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 337W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.6 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | 10V | ±30V | |||
