- Manufacture :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,170
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 9A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 83W (Tc) | N-Channel | - | 560V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | ||||
VIEW |
3,168
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO220-3 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | ||||
VIEW |
1,719
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | 8V | ±18V | ||||
VIEW |
755
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
2,306
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
3,743
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
1,102
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | ||||
VIEW |
849
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 9A I2PAK | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V |