Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP1M009A090H
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GP1M009A020HG
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IXTP20N65XM
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AOT9N70
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STP11N65M5
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STMicroelectronics MOSFET N CH 650V 9A TO-220 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 85W (Tc) N-Channel 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 5V @ 250µA 17nC @ 10V 644pF @ 100V 10V ±25V
STP12N60M2
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1,141
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STMicroelectronics MOSFET N-CH 600V 9A TO-220AB MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 85W (Tc) N-Channel 600V 9A (Tc) 450 mOhm @ 4.5A, 10V 4V @ 250µA 16nC @ 10V 538pF @ 100V 10V ±25V
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TPH3202PS
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1,102
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2,027
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 9A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 192W (Tc) N-Channel 500V 9A (Tc) 850 mOhm @ 4.5A, 10V 4.5V @ 250µA 28nC @ 10V 1042pF @ 25V 10V ±30V
TSM9N90ECZ C0G
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 9A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 89W (Tc) N-Channel 900V 9A (Tc) 1.4 Ohm @ 4.5A, 10V 4V @ 250µA 72nC @ 10V 2470pF @ 25V 10V ±30V