Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK20A25D,S5Q(M
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2,724
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS π-MOSVII Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 250V 20A (Ta) 100 mOhm @ 10A, 10V 3.5V @ 1mA 55nC @ 10V 2550pF @ 100V 10V ±20V
FQPF9N25
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RFQ
3,629
In-stock
ON Semiconductor MOSFET N-CH 250V 6.7A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 45W (Tc) N-Channel - 250V 6.7A (Tc) 420 mOhm @ 3.35A, 10V 5V @ 250µA 20nC @ 10V 700pF @ 25V 10V ±30V
FQP3N25
RFQ
VIEW
RFQ
3,490
In-stock
ON Semiconductor MOSFET N-CH 250V 2.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 45W (Tc) N-Channel - 250V 2.8A (Tc) 2.2 Ohm @ 1.4A, 10V 5V @ 250µA 5.2nC @ 10V 170pF @ 25V 10V ±30V