Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX62N25
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1,577
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IXYS MOSFET N-CH 250V 62A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 390W (Tc) N-Channel - 250V 62A (Tc) 35 mOhm @ 31A, 10V 4V @ 4mA 240nC @ 10V 6600pF @ 25V 10V ±20V
IRFB4332PBF
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2,247
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Infineon Technologies MOSFET N-CH 250V 60A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 390W (Tc) N-Channel - 250V 60A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IXFH80N25X3
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RFQ
2,573
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IXYS MOSFET N-CH 250V 80A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 390W (Tc) N-Channel - 250V 80A (Tc) 16 mOhm @ 40A, 10V 4.5V @ 1.5mA 83nC @ 10V 5430pF @ 25V 10V ±20V
IXTK62N25
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RFQ
3,869
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IXYS MOSFET N-CH 250V 62A TO-264 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 390W (Tc) N-Channel - 250V 62A (Tc) 35 mOhm @ 31A, 10V 4V @ 250µA 240nC @ 10V 5400pF @ 25V 10V ±20V
IXFP80N25X3
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RFQ
2,851
In-stock
IXYS MOSFET N-CH 250V 80A TO220AB HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB (IXFP) 390W (Tc) N-Channel - 250V 80A (Tc) 16 mOhm @ 40A, 10V 4.5V @ 1.5mA 83nC @ 10V 5430pF @ 25V 10V ±20V