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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK16A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	958 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 16A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	-	N-Channel	-	550V	16A (Ta)	330 mOhm @ 8A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	-	-
	TK9A55DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,496 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 8.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	550V	8.5A (Ta)	860 mOhm @ 4.3A, 10V	4V @ 1mA	20nC @ 10V	1050pF @ 25V	10V	±30V
	TK8A55DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,028 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	550V	7.5A (Ta)	1.07 Ohm @ 3.8A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	TK13A55DA(STA4,QM)	RFQ VIEW	PDF RFQ	1,213 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	12.5A (Ta)	480 mOhm @ 6.3A, 10V	4V @ 1mA	38nC @ 10V	1800pF @ 25V	10V	±30V
	TK12A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,036 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	12A (Ta)	570 mOhm @ 6A, 10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	10V	±30V
	TK11A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,382 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 11A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	11A (Ta)	630 mOhm @ 5.5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK10A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,444 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 10A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	10A (Ta)	720 mOhm @ 5A, 10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	10V	±30V
	TK14A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,469 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 14A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	-	550V	14A (Ta)	370 mOhm @ 7A, 10V	4V @ 1mA	40nC @ 10V	2300pF @ 25V	10V	±30V

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