Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 600V 18A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel - 600V 18A (Tc) 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
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3,035
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Microsemi Corporation MOSFET N-CH 600V 18A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel - 600V 18A (Tc) 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
IRFB16N60LPBF
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2,035
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Vishay Siliconix MOSFET N-CH 600V 16A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 310W (Tc) N-Channel - 600V 16A (Tc) 460 mOhm @ 9A, 10V 5V @ 250µA 100nC @ 10V 2720pF @ 25V 10V ±30V
FQA24N60
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683
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ON Semiconductor MOSFET N-CH 600V 23.5A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 310W (Tc) N-Channel - 600V 23.5A (Tc) 240 mOhm @ 11.8A, 10V 5V @ 250µA 145nC @ 10V 5500pF @ 25V 10V ±30V
IXFR26N60Q
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2,546
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IXYS MOSFET N-CH 600V 23A ISOPLUS247 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 310W (Tc) N-Channel - 600V 23A (Tc) 250 mOhm @ 13A, 10V 4.5V @ 4mA 200nC @ 10V 5100pF @ 25V 10V ±20V