Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFBG20
RFQ
VIEW
RFQ
3,131
In-stock
Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.4A (Tc) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V
IXTA1N100
RFQ
VIEW
RFQ
1,568
In-stock
IXYS MOSFET N-CH 1000V 1.5A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 54W (Tc) N-Channel 1000V 1.5A (Tc) 11 Ohm @ 1A, 10V 4.5V @ 25µA 14.5nC @ 10V 400pF @ 25V 10V ±30V
IXTP1N100
RFQ
VIEW
RFQ
1,478
In-stock
IXYS MOSFET N-CH 1000V 1.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.5A (Tc) 11 Ohm @ 1A, 10V 4.5V @ 25µA 14.5nC @ 10V 400pF @ 25V 10V ±30V
IRFBG20PBF
RFQ
VIEW
RFQ
1,843
In-stock
Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.4A (Tc) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V