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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRL3102	RFQ VIEW	PDF RFQ	710 In-stock	Infineon Technologies	MOSFET N-CH 20V 61A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	89W (Tc)	N-Channel	-	20V	61A (Tc)	13 mOhm @ 37A, 7V	700mV @ 250µA	58nC @ 4.5V	2500pF @ 15V	4.5V, 7V	±10V
	IXTP4N60P	RFQ VIEW	PDF RFQ	3,457 In-stock	IXYS	MOSFET N-CH 600V 4A TO-220		PolarHV™	Last Time Buy	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	89W (Tc)	N-Channel	-	600V	4A (Tc)	2 Ohm @ 2A, 10V	5.5V @ 100µA	13nC @ 10V	635pF @ 25V	10V	±30V
	IRL3102PBF	RFQ VIEW	PDF RFQ	1,022 In-stock	Infineon Technologies	MOSFET N-CH 20V 61A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	89W (Tc)	N-Channel	-	20V	61A (Tc)	13 mOhm @ 37A, 7V	700mV @ 250µA	58nC @ 4.5V	2500pF @ 15V	4.5V, 7V	±10V
	IXTP5N50P	RFQ VIEW	PDF RFQ	2,210 In-stock	IXYS	MOSFET N-CH 500V 4.8A TO-220		PolarHV™	Last Time Buy	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	89W (Tc)	N-Channel	-	500V	4.8A (Tc)	1.4 Ohm @ 2.4A, 10V	5.5V @ 50µA	12.6nC @ 10V	620pF @ 25V	10V	±30V

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