Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHM15NQ20T,518
RFQ
VIEW
RFQ
3,182
In-stock
NXP USA Inc. MOSFET N-CH 200V 17.5A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel - 200V 17.5A (Tc) 85 mOhm @ 15A, 10V 4V @ 1mA 40nC @ 10V 2170pF @ 30V 10V ±20V
SI4048DY-T1-GE3
RFQ
VIEW
RFQ
1,962
In-stock
Vishay Siliconix MOSFET N-CH 30V 19.3A 8SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) - 2.5W (Ta), 5.7W (Tc) N-Channel - 30V 19.3A (Tc) 85 mOhm @ 15A, 10V 3V @ 250µA 51nC @ 10V 2060pF @ 15V 10V ±20V
SI4048DY-T1-GE3
RFQ
VIEW
RFQ
2,289
In-stock
Vishay Siliconix MOSFET N-CH 30V 19.3A 8SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) - 2.5W (Ta), 5.7W (Tc) N-Channel - 30V 19.3A (Tc) 85 mOhm @ 15A, 10V 3V @ 250µA 51nC @ 10V 2060pF @ 15V 10V ±20V
SI4048DY-T1-GE3
RFQ
VIEW
RFQ
3,259
In-stock
Vishay Siliconix MOSFET N-CH 30V 19.3A 8SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 30V 19.3A (Tc) 85 mOhm @ 15A, 10V 3V @ 250µA 51nC @ 10V 2060pF @ 15V 10V ±20V