- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,730
In-stock
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IXYS | MOSFET N-CH 65V 130A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 250W (Tc) | N-Channel | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,748
In-stock
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
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|
VIEW |
1,837
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
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|
VIEW |
1,543
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2.7A (Ta) | 130 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 32.5V | 5V | +6V, -4V | |||
|
VIEW |
3,743
In-stock
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
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|
VIEW |
2,870
In-stock
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
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|
VIEW |
3,532
In-stock
|
EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
