- Series :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,843
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,142
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,566
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
3,998
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
843
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
3,894
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,234
In-stock
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
684
In-stock
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
2,244
In-stock
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,343
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,185
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
3,264
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
2,839
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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VIEW |
3,615
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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VIEW |
1,807
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V |