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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,977
In-stock
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Rohm Semiconductor | MOSFET N-CH 100V 30A LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | 100V | 30A (Ta) | 52 mOhm @ 15A, 10V | 2.5V @ 1mA | 50nC @ 10V | 2200pF @ 25V | 4V, 10V | ±20V | |||
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VIEW |
3,201
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
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VIEW |
1,563
In-stock
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Rohm Semiconductor | MOSFET N-CH 10V DRIVE LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | 600V | 15A (Tc) | 300 mOhm @ 7.5A, 10V | 4.5V @ 1mA | 50nC @ 10V | 1700pF @ 25V | - | - | |||
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VIEW |
2,670
In-stock
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Rohm Semiconductor | MOSFET N-CH 10V DRIVE LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | 500V | 16A (Ta) | 270 mOhm @ 8A, 10V | 4.5V @ 1mA | 50nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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VIEW |
706
In-stock
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Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,937
In-stock
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 69W (Tc) | N-Channel | 60V | 20A (Tc) | 7.6 mOhm @ 20A, 10V | 4V @ 35µA | 50nC @ 10V | 4000pF @ 30V | 10V | ±20V | |||
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VIEW |
1,471
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 11.5A 8SOIC | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | 100V | 11.5A (Ta) | 12 mOhm @ 11.5A, 10V | 2.4V @ 250µA | 50nC @ 10V | 2420pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
643
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 11.5A 8SOIC | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | 100V | 11.5A (Ta) | 12 mOhm @ 11.5A, 10V | 2.4V @ 250µA | 50nC @ 10V | 2420pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
2,214
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 11.5A 8SOIC | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | 100V | 11.5A (Ta) | 12 mOhm @ 11.5A, 10V | 2.4V @ 250µA | 50nC @ 10V | 2420pF @ 50V | 4.5V, 10V | ±20V |