Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Cree/Wolfspeed 1000V, 65 MOHM, G3 SIC MOSFET C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V
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Cree/Wolfspeed 1200V, 75 MOHM, G3 SIC MOSFET ON C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.6W (Tc) N-Channel - 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +15V, -4V