Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH34N65X2
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1,787
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IXYS MOSFET N-CH 650V 34A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel - 650V 34A (Tc) 105 mOhm @ 17A, 10V 4.5V @ 4mA 53nC @ 10V 3120pF @ 25V 10V ±30V
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789
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IXYS MOSFET N-CH Linear L2™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel - 75V 140A (Tc) 11 mOhm @ 70A, 10V 4.5V @ 250µA 275nC @ 10V 9300pF @ 25V 10V ±20V
IXFH20N85X
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2,412
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IXYS 850V/20A ULTRA JUNCTION X-CLASS HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel - 850V 20A (Tc) 330 mOhm @ 500mA, 10V 5.5V @ 2.5mA 63nC @ 10V 1660pF @ 25V 10V ±30V
IXFH34N65X2
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2,341
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IXYS MOSFET N-CH 650V 34A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel - 650V 34A (Tc) 105 mOhm @ 17A, 10V 5.5V @ 2.5mA 56nC @ 10V 3330pF @ 25V 10V ±30V