Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RJK4007DPP-M0#T2
RFQ
VIEW
RFQ
2,119
In-stock
Renesas Electronics America MOSFET N-CH 400V 7.6A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 32W (Tc) N-Channel 400V 7.6A (Ta) 550 mOhm @ 7A, 10V - 24.5nC @ 10V 850pF @ 25V 10V ±30V
IXTP8N65X2M
RFQ
VIEW
RFQ
2,193
In-stock
IXYS MOSFET N-CH 650V 4A X2 TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 32W (Tc) N-Channel 650V 4A (Tc) 550 mOhm @ 4A, 10V 5V @ 250µA 12nC @ 10V 800pF @ 25V 10V ±30V
IXTP8N70X2M
RFQ
VIEW
RFQ
3,730
In-stock
IXYS MOSFET N-CHANNEL 700V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Overmolded 32W (Tc) N-Channel 700V 4A (Tc) 550 mOhm @ 500mA, 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V 10V ±30V
SIHA12N50E-E3
RFQ
VIEW
RFQ
3,339
In-stock
Vishay Siliconix MOSFET N-CH 500V 10.5A TO-220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 32W (Tc) N-Channel 500V 10.5A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 50nC @ 10V 886pF @ 100V 10V ±30V