Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA60R120C7XKSA1
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Infineon Technologies MOSFET N-CH 600V 11A TO220FP-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel - 600V 11A (Tc) 120 mOhm @ 7.8A, 10V 4V @ 390µA 34nC @ 10V 1500pF @ 400V 10V ±20V
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Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel - 600V 11A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V
IPA65R310CFDXKSA1
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Infineon Technologies MOSFET N-CH 650V 11.4A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel - 650V 11.4A (Tc) 310 mOhm @ 4.4A, 10V 4.5V @ 440µA 41nC @ 10V 1100pF @ 100V 10V ±20V