Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK655R0-75C,127
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RFQ
3,511
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NXP USA Inc. MOSFET N-CH 75V 120A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 263W (Tc) N-Channel - 75V 120A (Tc) 5.3 mOhm @ 25A, 10V 2.8V @ 1mA 177nC @ 10V 11400pF @ 25V 4.5V, 10V ±16V
BUK653R5-55C,127
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RFQ
3,426
In-stock
NXP USA Inc. MOSFET N-CH 55V 120A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 263W (Tc) N-Channel - 55V 120A (Tc) 3.9 mOhm @ 25A, 10V 2.8V @ 1mA 191nC @ 10V 11516pF @ 25V 4.5V, 10V ±16V
PHW80NQ10T,127
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RFQ
3,076
In-stock
NXP USA Inc. MOSFET N-CH 100V 80A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 263W (Tc) N-Channel - 100V 80A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 109nC @ 10V 4720pF @ 25V 10V ±20V
BUK652R1-30C,127
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RFQ
3,652
In-stock
NXP USA Inc. MOSFET N-CH 30V 120A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 263W (Tc) N-Channel - 30V 120A (Tc) 2.4 mOhm @ 25A, 10V 2.8V @ 1mA 168nC @ 10V 10918pF @ 25V 4.5V, 10V ±16V
BUK652R6-40C,127
RFQ
VIEW
RFQ
962
In-stock
NXP USA Inc. MOSFET N-CH 40V 120A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 263W (Tc) N-Channel - 40V 120A (Tc) 2.7 mOhm @ 25A, 10V 2.8V @ 1mA 199nC @ 10V 11334pF @ 25V 4.5V, 10V ±16V