- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 4.9A, 10V (2)
- 1.1 Ohm @ 5A, 10V (2)
- 1.3 Ohm @ 4.3A, 10V (1)
- 1.6 Ohm @ 4A, 10V (1)
- 1.9 Ohm @ 4A, 10V (2)
- 109 mOhm @ 15.4A, 10V (3)
- 110 mOhm @ 15A, 10V (1)
- 160 mOhm @ 15.4A, 10V (3)
- 185 mOhm @ 15.4A, 10V (2)
- 50 mOhm @ 19A, 10V (2)
- 650 mOhm @ 6A, 10V (1)
- 700 mOhm @ 6A, 10V (1)
- 98 mOhm @ 15.4A, 10V (3)
- 98 mOhm @ 9.4A, 10V (3)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
27 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,417
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 21.7A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 240W (Tc) | N-Channel | - | 650V | 21.7A (Tc) | 185 mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,595
In-stock
|
Microsemi Corporation | MOSFET N-CH 1000V 8A TO247AD | POWER MOS IV® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD | 240W (Tc) | N-Channel | - | 1000V | 8A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 1mA | 105nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,267
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 24.3A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 240W (Tc) | N-Channel | - | 650V | 24.3A (Tc) | 160 mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,238
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 9.8A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 9.8A (Tc) | 1.05 Ohm @ 4.9A, 10V | 5V @ 250µA | 71nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,470
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 9.8A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 9.8A (Tc) | 1.05 Ohm @ 4.9A, 10V | 5V @ 250µA | 71nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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|
VIEW |
684
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 10A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 10A (Tc) | 1.1 Ohm @ 5A, 10V | 5V @ 250µA | 58nC @ 10V | 2800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,676
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 12A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 600V | 12A (Tc) | 700 mOhm @ 6A, 10V | 5V @ 250µA | 54nC @ 10V | 1900pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,443
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 8A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 900V | 8A (Tc) | 1.9 Ohm @ 4A, 10V | 5V @ 250µA | 45nC @ 10V | 2080pF @ 25V | 10V | ±30V | |||
|
VIEW |
830
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 21.7A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 240W (Tc) | N-Channel | - | 650V | 21.7A (Tc) | 185 mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,983
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
680
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,539
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,378
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 24.3A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 240W (Tc) | N-Channel | - | 650V | 24.3A (Tc) | 160 mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,066
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN | DTMOSIV-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,266
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN | DTMOSIV-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,067
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN | DTMOSIV-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 98 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,132
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 10A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 10A (Tc) | 1.1 Ohm @ 5A, 10V | 5V @ 250µA | 58nC @ 10V | 2800pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,651
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 12A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 240W (Tc) | N-Channel | - | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 34nC @ 10V | 1676pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,841
In-stock
|
IXYS | FET N-CHANNEL | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 240W (Tc) | N-Channel | - | 300V | 38A (Tc) | 50 mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | 2240pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,516
In-stock
|
IXYS | FET N-CHANNEL | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 240W (Tc) | N-Channel | - | 300V | 38A (Tc) | 50 mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | 2240pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,184
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 8A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 240W (Tc) | N-Channel | - | 900V | 8A (Tc) | 1.9 Ohm @ 4A, 10V | 5V @ 250µA | 45nC @ 10V | 2080pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,744
In-stock
|
ON Semiconductor | SUPERFET3 650V TO247 PKG | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 240W (Tc) | N-Channel | - | 650V | 30A (Tc) | 110 mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | 2560pF @ 400V | 10V | ±30V | |||
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|
VIEW |
2,636
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 24.3A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 240W (Tc) | N-Channel | - | 650V | 24.3A (Tc) | 160 mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,310
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 8.6A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 240W (Tc) | N-Channel | - | 900V | 8.6A (Tc) | 1.3 Ohm @ 4.3A, 10V | 5V @ 250µA | 72nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,069
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,327
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,905
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
