- Series :
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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,976
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | - | - | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | - | - | 720pF @ 35V | - | - | |||
|
VIEW |
2,165
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 80W (Tc) | N-Channel | - | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,209
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 80W (Tc) | N-Channel | - | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,573
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 80W (Tc) | N-Channel | - | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,139
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,264
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
904
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,424
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
606
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,363
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,805
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
