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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK1119(F)	RFQ VIEW	PDF RFQ	2,164 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 1000V 4A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	1000V	4A (Ta)	3.8 Ohm @ 2A, 10V	3.5V @ 1mA	60nC @ 10V	700pF @ 25V	10V	±20V
	STP4NB80	RFQ VIEW	PDF RFQ	2,377 In-stock	STMicroelectronics	MOSFET N-CH 800V 4A TO-220		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	800V	4A (Tc)	3.3 Ohm @ 2A, 10V	5V @ 250µA	29nC @ 10V	920pF @ 25V	10V	±30V
	STP5NB60	RFQ VIEW	PDF RFQ	2,070 In-stock	STMicroelectronics	MOSFET N-CH 600V 5A TO-220		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	600V	5A (Tc)	2 Ohm @ 2.5A, 10V	5V @ 250µA	30nC @ 10V	884pF @ 25V	10V	±30V
	IRF730	RFQ VIEW	PDF RFQ	1,335 In-stock	STMicroelectronics	MOSFET N-CH 400V 5.5A TO-220		PowerMESH™ II	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	400V	5.5A (Tc)	1 Ohm @ 3A, 10V	4V @ 250µA	24nC @ 10V	530pF @ 25V	10V	±20V
	IRF830	RFQ VIEW	PDF RFQ	1,257 In-stock	STMicroelectronics	MOSFET N-CH 500V 4.5A TO-220		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	500V	4.5A (Tc)	1.5 Ohm @ 2.7A, 10V	4V @ 250µA	30nC @ 10V	610pF @ 25V	10V	±20V
	STP3NB100	RFQ VIEW	PDF RFQ	3,951 In-stock	STMicroelectronics	MOSFET N-CH 1KV 3A TO-220		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	-	1000V	3A (Tc)	6 Ohm @ 1.5A, 10V	4V @ 250µA	30nC @ 10V	700pF @ 25V	10V	±30V
	TK10E60W,S1VX	RFQ VIEW	PDF RFQ	3,760 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A TO-220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	100W (Tc)	N-Channel	Super Junction	600V	9.7A (Ta)	380 mOhm @ 4.9A, 10V	3.7V @ 500µA	20nC @ 10V	700pF @ 300V	10V	±30V

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