Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP320N20N3GXKSA1
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Infineon Technologies MOSFET N-CH 200V 34A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 136W (Tc) N-Channel - 200V 34A (Tc) 32 mOhm @ 34A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V
IPP600N25N3GXKSA1
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1,576
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Infineon Technologies MOSFET N-CH 250V 25A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 136W (Tc) N-Channel - 250V 25A (Tc) 60 mOhm @ 25A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V