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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT30M85BVFRG	RFQ VIEW	PDF RFQ	1,176 In-stock	Microsemi Corporation	MOSFET N-CH 300V 40A TO-247		POWER MOS V®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	300W (Tc)	N-Channel	-	300V	40A (Tc)	85 mOhm @ 500mA, 10V	4V @ 1mA	195nC @ 10V	4950pF @ 25V	10V	±30V
	APT20M45BVFRG	RFQ VIEW	PDF RFQ	3,424 In-stock	Microsemi Corporation	MOSFET N-CH 200V 56A TO-247		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	300W (Tc)	N-Channel	-	200V	56A (Tc)	45 mOhm @ 500mA, 10V	4V @ 1mA	195nC @ 10V	4860pF @ 25V	10V	±30V
	APT30M85BVRG	RFQ VIEW	PDF RFQ	1,281 In-stock	Microsemi Corporation	MOSFET N-CH 300V 40A TO-247		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	300W (Tc)	N-Channel	-	300V	40A (Tc)	85 mOhm @ 500mA, 10V	4V @ 1mA	195nC @ 10V	4950pF @ 25V	10V	±30V
	APT20M45BVRG	RFQ VIEW	PDF RFQ	2,781 In-stock	Microsemi Corporation	MOSFET N-CH 200V 56A TO-247		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	300W (Tc)	N-Channel	-	200V	56A (Tc)	45 mOhm @ 500mA, 10V	4V @ 1mA	195nC @ 10V	4860pF @ 25V	10V	±30V

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