Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM1NB60SCT A3G
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92 - Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2.5W (Tc) N-Channel - 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
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STMicroelectronics MOSFET N-CH 600V 0.6A TO-92 SuperMESH3™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 2.5W (Tc) N-Channel - 600V 600mA (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V