Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STN5PF02V
RFQ
VIEW
RFQ
3,825
In-stock
STMicroelectronics MOSFET P-CH 20V 4.2A SOT223 STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) P-Channel - 20V 4.2A (Tc) 80 mOhm @ 2.1A, 4.5V 450mV @ 250µA 6nC @ 2.5V 412pF @ 15V 2.5V, 4.5V ±8V
STN3PF06
RFQ
VIEW
RFQ
2,449
In-stock
STMicroelectronics MOSFET P-CH 60V 2.5A SOT223 STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) P-Channel - 60V 2.5A (Tc) 220 mOhm @ 1.5A, 10V 4V @ 250µA 21nC @ 10V 850pF @ 25V 10V ±20V
STN1NK80Z
RFQ
VIEW
RFQ
1,362
In-stock
STMicroelectronics MOSFET N-CH 800V 0.25A SOT223 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 800V 250mA (Tc) 16 Ohm @ 500mA, 10V 4.5V @ 50µA 7.7nC @ 10V 160pF @ 25V 10V ±30V
TSM2N60SCW RPG
RFQ
VIEW
RFQ
1,709
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
STN1NF10
RFQ
VIEW
RFQ
3,487
In-stock
STMicroelectronics MOSFET N-CH 100V 1A SOT-223 STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 100V 1A (Tc) 800 mOhm @ 500mA, 10V 4V @ 250µA 6nC @ 10V 105pF @ 25V 10V ±20V