- Manufacture :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
-
- 1.5A (Ta) (1)
- 1.6A (Ta) (3)
- 1.9A (Ta) (1)
- 2.8A (Ta) (3)
- 2A (Ta) (2)
- 3.1A (Ta) (2)
- 3.7A (Ta) (2)
- 3.8A (Ta) (1)
- 3.9A (Ta) (2)
- 320mA (Ta) (2)
- 350mA (Ta) (2)
- 370mA (Ta) (2)
- 4.6A (Ta) (2)
- 400mA (Ta) (2)
- 450mA (Ta) (2)
- 490mA (Ta) (2)
- 5.1A (Ta) (2)
- 5.2A (Ta) (1)
- 560mA (Ta) (2)
- 5A (Ta) (1)
- 5A (Tc) (2)
- 600mA (Ta) (2)
- 630mA (Ta) (2)
- 800mA (Ta) (2)
- Rds On (Max) @ Id, Vgs :
-
- 1.1 Ohm @ 380mA, 10V (2)
- 1.5 Ohm @ 340mA, 10V (2)
- 1.5 Ohm @ 360mA, 10V (2)
- 1.8 Ohm @ 210mA, 10V (2)
- 140 mOhm @ 2A, 10V (2)
- 160 mOhm @ 1.9A, 10V (2)
- 2 Ohm @ 270mA, 10V (2)
- 200 mOhm @ 1.6A, 10V (1)
- 220 mOhm @ 1.6A, 10V (2)
- 3 Ohm @ 220mA, 10V (2)
- 3 Ohm @ 240mA, 10V (2)
- 3.6 Ohm @ 210mA, 10V (2)
- 31 mOhm @ 4.6A, 10V (2)
- 4.4 Ohm @ 190mA, 10V (2)
- 40 mOhm @ 3.8A, 10V (2)
- 45 mOhm @ 3.7A, 10V (2)
- 45 mOhm @ 3.9A, 10V (2)
- 57.5 mOhm @ 3.1A, 10V (2)
- 60 mOhm @ 3A, 10V (3)
- 65 mOhm @ 3.1A, 10V (2)
- 75 mOhm @ 2.8A, 10V (3)
- 800 mOhm @ 480mA, 10V (2)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
45 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,012
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.1A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
1,585
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
1,157
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,203
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,246
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.2A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.2A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
2,443
In-stock
|
Infineon Technologies | MOSFET NCH 55V 5A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
779
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,493
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,304
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
2,312
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,285
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
695
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,709
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,397
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,903
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
1,622
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,958
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,663
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
3,080
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,421
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,754
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT-223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,293
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | - | 200V | 400mA (Ta) | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,204
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,429
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,283
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 0.56A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | - | 200V | 560mA (Ta) | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,177
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,078
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,695
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,241
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
1,003
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
