Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
MCH3486-TL-H
RFQ
VIEW
RFQ
1,602
In-stock
ON Semiconductor MOSFET N-CH 60V 2A MCPH3 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 1W (Ta) N-Channel - 60V 2A (Ta) 137 mOhm @ 1A, 10V - 7nC @ 10V 310pF @ 20V 4V, 10V ±20V
AUIRLL014N
RFQ
VIEW
RFQ
1,585
In-stock
Infineon Technologies MOSFET N-CH 55V 2A SOT-223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V
IRLL014NTR
RFQ
VIEW
RFQ
1,767
In-stock
Infineon Technologies MOSFET N-CH 55V 2A SOT223 HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V