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- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,360
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 38 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | 340pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,281
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A 2-3Z1A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | 436pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,116
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 30V 6A 2-3Z1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 30V | 6A (Ta) | 42 mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | 560pF @ 15V | 1.8V, 10V | ±12V |