Transistors - FETs, MOSFETs - Single Products For Sale - PDF - Discrete Semiconductor Products -

Applied Filters :

4 results

Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
GLOBAL STOCKS
	IRF1010EZL	RFQ VIEW	PDF RFQ	610 In-stock	Infineon Technologies	MOSFET N-CH 60V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	60V	75A (Tc)	8.5 mOhm @ 51A, 10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	10V	±20V
	IRF1010EZLPBF	RFQ VIEW	PDF RFQ	3,735 In-stock	Infineon Technologies	MOSFET N-CH 60V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	60V	75A (Tc)	8.5 mOhm @ 51A, 10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	10V	±20V
	IRF1010EZ	RFQ VIEW	PDF RFQ	2,152 In-stock	Infineon Technologies	MOSFET N-CH 60V 75A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	140W (Tc)	N-Channel	60V	75A (Tc)	8.5 mOhm @ 51A, 10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	10V	±20V
	TK60D08J1(Q)	RFQ VIEW	PDF RFQ	3,807 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 60A TO220W		-	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220(W)	140W (Tc)	N-Channel	75V	60A (Ta)	7.8 mOhm @ 30A, 10V	2.3V @ 1mA	86nC @ 10V	5450pF @ 10V	4.5V, 10V	±20V

1 / 1

＜Prev Next＞