Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STI23NM60ND
RFQ
VIEW
RFQ
2,901
In-stock
STMicroelectronics MOSFET N-CH 600V 19.5A I2PAK FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 150W (Tc) N-Channel - 600V 19.5A (Tc) 180 mOhm @ 10A, 10V 5V @ 250µA 70nC @ 10V 2050pF @ 50V 10V ±25V
IPI80N08S406AKSA1
RFQ
VIEW
RFQ
2,508
In-stock
Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 150W (Tc) N-Channel - 80V 80A (Tc) 5.8 mOhm @ 80A, 10V 4V @ 90µA 70nC @ 10V 4800pF @ 25V 10V ±20V