- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,028
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 4A I2PAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 70W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | ||||
VIEW |
605
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 650V 4A TO251 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 70W (Tc) | N-Channel | - | 650V | 4A (Tc) | 3.37 Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | 549pF @ 25V | 10V | ±30V | ||||
VIEW |
2,395
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 4A IPAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V |