Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP10NM50N
RFQ
VIEW
RFQ
2,383
In-stock
STMicroelectronics MOSFET N-CH 500V 7A TO220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 70W (Tc) N-Channel - 500V 7A (Tc) 630 mOhm @ 3.5A, 10V 4V @ 250µA 17nC @ 10V 450pF @ 50V 10V ±25V
STP10NM60N
RFQ
VIEW
RFQ
906
In-stock
STMicroelectronics MOSFET N-CH 600V 10A TO220 MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 600V 10A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 50V 10V ±25V
STP9NM60N
RFQ
VIEW
RFQ
2,045
In-stock
STMicroelectronics MOSFET N-CH 600V 6.5A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 600V 6.5A (Tc) 745 mOhm @ 3.25A, 10V 4V @ 250µA 17.4nC @ 10V 452pF @ 50V 10V ±25V
STP8NM60N
RFQ
VIEW
RFQ
2,864
In-stock
STMicroelectronics MOSFET N-CH 600V 7A TO-220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 600V 7A (Tc) 650 mOhm @ 3.5A, 10V 4V @ 250µA 19nC @ 10V 560pF @ 50V 10V ±25V
STP11NM50N
RFQ
VIEW
RFQ
2,647
In-stock
STMicroelectronics MOSFET N-CH 500V 9A TO-220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 500V 8.5A (Tc) 470 mOhm @ 4.5A, 10V 4V @ 250µA 19nC @ 10V 547pF @ 50V 10V ±25V