Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STU16N65M2
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2,543
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STU16N60M2
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1,856
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STMicroelectronics MOSFET N-CH 600V 12A IPAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 600V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 19nC @ 10V 700pF @ 100V 10V ±25V
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2,142
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IRFU13N20DPBF
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1,366
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Infineon Technologies MOSFET N-CH 200V 13A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V
STU13N60M2
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2,647
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STMicroelectronics MOSFET N-CH 600V 11A IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 580pF @ 100V 10V ±25V
IRFU2405PBF
RFQ
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RFQ
2,324
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Infineon Technologies MOSFET N-CH 55V 56A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 55V 56A (Tc) 16 mOhm @ 34A, 10V 4V @ 250µA 110nC @ 10V 2430pF @ 25V 10V ±20V
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RFQ
3,568
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Infineon Technologies MOSFET P-CH 150V 13A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V
IRFU5305PBF
RFQ
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3,819
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Infineon Technologies MOSFET P-CH 55V 31A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) P-Channel - 55V 31A (Tc) 65 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
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RFQ
VIEW
RFQ
3,463
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STMicroelectronics MOSFET N-CH 1050V 4A IPAK SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 1050V 4A (Tc) 2 Ohm @ 2A, 10V 5V @ 100µA 17nC @ 10V 380pF @ 100V 10V ±30V