Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPB21N10
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1,128
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Infineon Technologies MOSFET N-CH 100V 21A D2PAK SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 90W (Tc) N-Channel - 100V 21A (Tc) 80 mOhm @ 15A, 10V 4V @ 44µA 38.4nC @ 10V 865pF @ 25V 10V ±20V
STB12NM60N
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RFQ
2,240
In-stock
STMicroelectronics MOSFET N-CH 600V 10A D2PAK MDmesh™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 90W (Tc) N-Channel - 600V 10A (Tc) 410 mOhm @ 5A, 10V 4V @ 250µA 30.5nC @ 10V 960pF @ 50V 10V ±25V
STB7N52K3
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RFQ
3,548
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STMicroelectronics MOSFET N-CH 525V 6.2A D2PAK SuperMESH3™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 90W (Tc) N-Channel - 525V 6A (Tc) 980 mOhm @ 3.1A, 10V 4.5V @ 50µA 34nC @ 10V 737pF @ 100V 10V ±30V
STB16N65M5
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RFQ
2,001
In-stock
STMicroelectronics MOSFET N-CH 650V 12A D2PAK MDmesh™ V Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 90W (Tc) N-Channel - 650V 12A (Tc) 299 mOhm @ 6A, 10V 5V @ 250µA 31nC @ 10V 1250pF @ 100V 10V ±25V