Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BBS3002-TL-1E
RFQ
VIEW
RFQ
2,970
In-stock
ON Semiconductor MOSFET P-CH 60V 100A - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 90W (Tc) P-Channel - 60V 100A (Ta) 5.8 mOhm @ 50A, 10V - 280nC @ 10V 13200pF @ 20V 4V, 10V ±20V
STB12NM60N
RFQ
VIEW
RFQ
2,240
In-stock
STMicroelectronics MOSFET N-CH 600V 10A D2PAK MDmesh™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 90W (Tc) N-Channel - 600V 10A (Tc) 410 mOhm @ 5A, 10V 4V @ 250µA 30.5nC @ 10V 960pF @ 50V 10V ±25V
STB19NF20
RFQ
VIEW
RFQ
1,690
In-stock
STMicroelectronics MOSFET N-CH 200V 15A D2PAK MESH OVERLAY™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 90W (Tc) N-Channel - 200V 15A (Tc) 160 mOhm @ 7.5A, 10V 4V @ 250µA 24nC @ 10V 800pF @ 25V 10V ±20V