- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.9A, 10V (1)
- 1.22 Ohm @ 2.6A, 10V (1)
- 1.6 Ohm @ 4A, 10V (1)
- 1.75 Ohm @ 2A, 10V (1)
- 1.9 Ohm @ 3.15A, 10V (1)
- 11 Ohm @ 600mA, 10V (1)
- 2.1 Ohm @ 1A, 10V (1)
- 2.5 Ohm @ 1.5A, 10V (2)
- 2.6 Ohm @ 1A, 10V (1)
- 235 mOhm @ 15A, 10V (1)
- 240 mOhm @ 12.5A, 10V (1)
- 3 Ohm @ 3A, 10V (1)
- 36 mOhm @ 20A, 10V (1)
- 360 mOhm @ 10.5A, 10V (1)
- 4.3 Ohm @ 1A, 10V (1)
- 520 mOhm @ 4A, 10V (2)
- 600 mOhm @ 3.5A, 10V (1)
- 750 mOhm @ 3.3A, 10V (2)
- 8 Ohm @ 750mA, 10V (2)
- 820 mOhm @ 3.1A, 10V (1)
- 900 mOhm @ 2.7A, 10V (1)
- 930 mOhm @ 3.1A, 10V (2)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 115pF @ 100V (2)
- 122pF @ 100V (1)
- 1400pF @ 25V (2)
- 1417pF @ 25V (2)
- 1423pF @ 25V (2)
- 1730pF @ 10V (1)
- 173pF @ 100V (1)
- 175pF @ 100V (2)
- 177pF @ 100V (1)
- 180pF @ 100V (1)
- 2080pF @ 25V (1)
- 2600pF @ 25V (2)
- 280pF @ 25V (1)
- 2900pF @ 25V (1)
- 380pF @ 300V (2)
- 390pF @ 300V (2)
- 4100pF @ 25V (1)
- 490pF @ 300V (1)
- 980pF @ 10V (1)
- Applied Filters :
27 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,190
In-stock
|
Renesas Electronics America | MOSFET N-CH 200V 40A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 200V | 40A (Ta) | 36 mOhm @ 20A, 10V | - | 72nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,422
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 60W (Tc) | N-Channel | - | 900V | 6A (Ta) | 3 Ohm @ 3A, 10V | - | - | 980pF @ 10V | 10V | ±30V | |||
|
|
VIEW |
1,144
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 8A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 60W (Tc) | N-Channel | - | 900V | 8A (Ta) | 1.6 Ohm @ 4A, 10V | - | - | 1730pF @ 10V | 10V | ±30V | |||
|
|
VIEW |
2,137
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 25A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
886
In-stock
|
Renesas Electronics America | MOSFET N-CH 600V 30A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 600V | 30A (Ta) | 235 mOhm @ 15A, 10V | - | 92nC @ 10V | 4100pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,199
In-stock
|
Renesas Electronics America | MOSFET N-CH 600V 21A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 600V | 21A (Ta) | 360 mOhm @ 10.5A, 10V | - | 67nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
|
VIEW |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,343
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,118
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2A PW-MOLD | π-MOSVII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PW-MOLD2 | 60W (Tc) | N-Channel | - | 600V | 2A (Ta) | 4.3 Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | 280pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,587
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 6.3A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 60W (Tc) | N-Channel | - | 900V | 6.3A (Tc) | 1.9 Ohm @ 3.15A, 10V | 5V @ 250µA | 45nC @ 10V | 2080pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,582
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3A TO-220AB | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.5 Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | 175pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
813
In-stock
|
STMicroelectronics | MOSFET N-CH 1050V 1.4A TO-220 | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 1050V | 1.4A (Tc) | 11 Ohm @ 600mA, 10V | 4.5V @ 50µA | 13nC @ 10V | 180pF @ 100V | 10V | ±30V | |||
|
VIEW |
902
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 6.6A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 500V | 6.6A (Tc) | 520 mOhm @ 4A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,953
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 5.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 600V | 5.5A (Tc) | 750 mOhm @ 3.3A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,892
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 5.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,196
In-stock
|
STMicroelectronics | N-CHANNEL 900 V, 0.25 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 900V | 3A (Tc) | 2.1 Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | 173pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,332
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,715
In-stock
|
STMicroelectronics | MOSFET N-CH 1050V 1.5A TO-220AB | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 1050V | 1.5A (Tc) | 8 Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,917
In-stock
|
STMicroelectronics | MOSFET N-CH 1050V 1.5A IPAK | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 60W (Tc) | N-Channel | - | 1050V | 1.5A (Tc) | 8 Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
1,131
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3A IPAK | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 60W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.5 Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | 175pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
2,041
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 6.6A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 500V | 6.6A (Tc) | 520 mOhm @ 4A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
798
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 5.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 600V | 5.5A (Tc) | 750 mOhm @ 3.3A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,460
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 5.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,853
In-stock
|
STMicroelectronics | N-CHANNEL 800 V, 1.50 OHM TYP., | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
2,868
In-stock
|
STMicroelectronics | MOSFET N-CHANNEL 800V 3A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.6 Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | 10V | ±30V | |||
