Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI90R1K0C3XKSA1
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RFQ
2,852
In-stock
Infineon Technologies MOSFET N-CH 900V 5.7A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 89W (Tc) N-Channel - 900V 5.7A (Tc) 1 Ohm @ 3.3A, 10V 3.5V @ 370µA 34nC @ 10V 850pF @ 100V 10V ±20V
IRFZ34NL
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RFQ
1,089
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFZ34NLPBF
RFQ
VIEW
RFQ
2,882
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRF634NLPBF
RFQ
VIEW
RFQ
1,086
In-stock
Vishay Siliconix MOSFET N-CH 250V 8A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.8W (Ta), 88W (Tc) N-Channel - 250V 8A (Tc) 435 mOhm @ 4.8A, 10V 4V @ 250µA 34nC @ 10V 620pF @ 25V 10V ±20V
STI6N62K3
RFQ
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RFQ
1,760
In-stock
STMicroelectronics MOSFET N-CH 620V 5.5A I2PAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 90W (Tc) N-Channel - 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 10V ±30V