- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 125W (Tc) (1)
- 170W (Tc) (1)
- 3.13W (Ta), 53W (Tc) (1)
- 3.1W (Ta), 110W (Tc) (1)
- 3.1W (Ta), 170W (Tc) (1)
- 3.75W (Ta), 100W (Tc) (1)
- 3.75W (Ta), 120W (Tc) (1)
- 3.75W (Ta), 155W (Tc) (1)
- 3.75W (Ta), 160W (Tc) (1)
- 3.75W (Ta), 40W (Tc) (1)
- 3.75W (Ta), 45W (Tc) (1)
- 3.75W (Ta), 65W (Tc) (1)
- 3.75W (Ta), 79W (Tc) (1)
- 3.7W (Ta), 43W (Tc) (2)
- 3.8W (Ta), 110W (Tc) (6)
- 3.8W (Ta), 140W (Tc) (1)
- 3.8W (Ta), 200W (Tc) (1)
- 3.8W (Ta), 45W (Tc) (2)
- 3.8W (Ta), 48W (Tc) (2)
- 3.8W (Ta), 68W (Tc) (2)
- 3.8W (Ta), 79W (Tc) (1)
- 3W (Ta), 125W (Tc) (2)
- Current - Continuous Drain (Id) @ 25°C :
-
- 1.8A (Tc) (1)
- 11.4A (Tc) (1)
- 11A (Tc) (2)
- 12A (Tc) (3)
- 13A (Tc) (4)
- 14A (Tc) (1)
- 15A (Tc) (1)
- 17A (Tc) (1)
- 19A (Tc) (3)
- 23A (Tc) (2)
- 27A (Tc) (1)
- 3.5A (Tc) (1)
- 31A (Tc) (2)
- 33.5A (Tc) (1)
- 38A (Tc) (1)
- 4.5A (Tc) (1)
- 40A (Tc) (1)
- 42A (Tc) (1)
- 47A (Tc) (1)
- 4A (Tc) (1)
- 6.5A (Tc) (1)
- 6.7A (Tc) (2)
- 6.8A (Tc) (3)
- 7A (Tc) (1)
- 80A (Tc) (1)
- 8A (Tc) (1)
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.25A, 10V (1)
- 1.2 Ohm @ 2.4A, 10V (1)
- 1.5 Ohm @ 1.5A, 10V (1)
- 100 mOhm @ 10A, 10V (2)
- 117 mOhm @ 11A, 10V (1)
- 117 mOhm @ 14A, 10V (1)
- 120 mOhm @ 8.5A, 10V (1)
- 175 mOhm @ 5.7A, 10V (1)
- 175 mOhm @ 7.2A, 10V (2)
- 20 mOhm @ 42A, 10V (1)
- 200 mOhm @ 11A, 10V (1)
- 200 mOhm @ 7.5A, 10V (1)
- 200 mOhm @ 8.4A, 10V (1)
- 26 mOhm @ 23.5A, 10V (1)
- 290 mOhm @ 6.6A, 10V (4)
- 3 Ohm @ 900mA, 10V (1)
- 300 mOhm @ 7.2A, 10V (1)
- 410 mOhm @ 3.5A, 10V (1)
- 480 mOhm @ 4A, 10V (2)
- 5.2 mOhm @ 80A, 10V (1)
- 500 mOhm @ 4A, 10V (2)
- 500 mOhm @ 6.6A, 10V (2)
- 530 mOhm @ 4A, 10V (1)
- 60 mOhm @ 16.75A, 10V (1)
- 60 mOhm @ 16A, 10V (2)
- 60 mOhm @ 24A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 600 mOhm @ 4.1A, 10V (1)
- 70 mOhm @ 13.5A, 10V (1)
- 800 mOhm @ 3.9A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 110nC @ 10V (3)
- 11nC @ 10V (1)
- 12nC @ 10V (2)
- 151nC @ 10V (1)
- 15nC @ 10V (1)
- 17nC @ 10V (1)
- 180nC @ 10V (2)
- 18nC @ 10V (1)
- 19nC @ 10V (2)
- 22nC @ 10V (1)
- 230nC @ 10V (1)
- 27nC @ 10V (3)
- 29nC @ 10V (1)
- 35nC @ 10V (2)
- 38nC @ 10V (2)
- 43nC @ 10V (1)
- 44nC @ 10V (2)
- 58nC @ 10V (1)
- 61nC @ 10V (1)
- 63nC @ 10V (2)
- 66nC @ 10V (4)
- 8.2nC @ 10V (2)
- 8.7nC @ 10V (1)
- 97nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10300pF @ 25V (1)
- 1100pF @ 25V (1)
- 1200pF @ 25V (4)
- 1300pF @ 25V (1)
- 1400pF @ 25V (2)
- 1450pF @ 25V (1)
- 170pF @ 25V (1)
- 200pF @ 25V (1)
- 250pF @ 25V (1)
- 2700pF @ 25V (1)
- 270pF @ 25V (2)
- 2780pF @ 25V (1)
- 2910pF @ 25V (1)
- 295pF @ 25V (1)
- 3500pF @ 25V (1)
- 350pF @ 25V (5)
- 3600pF @ 25V (1)
- 390pF @ 25V (1)
- 470pF @ 25V (1)
- 550pF @ 25V (1)
- 620pF @ 25V (2)
- 700pF @ 25V (1)
- 760pF @ 25V (1)
- 860pF @ 25V (5)
- 900pF @ 25V (1)
- Applied Filters :
39 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
958
In-stock
|
Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | P-Channel | - | 40V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | 10300pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,377
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
VIEW |
644
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,473
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,787
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 27A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.75W (Ta), 120W (Tc) | P-Channel | - | 60V | 27A (Tc) | 70 mOhm @ 13.5A, 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | 10V | ±25V | |||
|
VIEW |
3,707
In-stock
|
ON Semiconductor | MOSFET P-CH 120V 15A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 100W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
819
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,439
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 11A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3W (Ta), 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
VIEW |
685
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 6.5A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 6.5A (Tc) | 800 mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,999
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 3.5A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 3.5A (Tc) | 1.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,435
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,564
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 19A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
|
VIEW |
703
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 12A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,543
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 6.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 6.8A (Tc) | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,480
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 4A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
VIEW |
905
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 33.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 155W (Tc) | P-Channel | - | 100V | 33.5A (Tc) | 60 mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | 10V | ±25V | |||
|
VIEW |
2,546
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 17A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 79W (Tc) | P-Channel | - | 60V | 17A (Tc) | 120 mOhm @ 8.5A, 10V | 4V @ 250µA | 27nC @ 10V | 900pF @ 25V | 10V | ±25V | |||
|
VIEW |
1,319
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 11.4A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 53W (Tc) | P-Channel | - | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 10V | ±25V | |||
|
VIEW |
644
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 65W (Tc) | P-Channel | - | 100V | 8A (Tc) | 530 mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,099
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 47A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 160W (Tc) | P-Channel | - | 60V | 47A (Tc) | 26 mOhm @ 23.5A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 10V | ±25V | |||
|
VIEW |
1,865
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 11A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3W (Ta), 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,260
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,736
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,891
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,755
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,479
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,214
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
VIEW |
742
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,355
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,981
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V |