- Supplier Device Package :
- Power Dissipation (Max) :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,905
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 75W (Tc) | P-Channel | - | 40V | 80A (Tc) | 8.2 mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | 5430pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
910
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 88W (Tc) | P-Channel | - | 40V | 80A (Tc) | 6.7 mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | 6580pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
1,190
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | P-Channel | - | 40V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | 3800pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
2,644
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 88W (Tc) | P-Channel | - | 40V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | 6085pF @ 25V | 10V | ±20V | |||
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VIEW |
958
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | P-Channel | - | 40V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | 10300pF @ 25V | 10V | ±20V | |||
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VIEW |
705
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 137W (Tc) | P-Channel | - | 30V | 80A (Tc) | 5 mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | 10300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,797
In-stock
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Infineon Technologies | MOSFET P-CH 30V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 88W (Tc) | P-Channel | - | 30V | 80A (Tc) | 7.2 mOhm @ 80A, 10V | 2V @ 130µA | 80nC @ 10V | 5700pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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VIEW |
3,127
In-stock
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Infineon Technologies | MOSFET P-CH 30V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 137W (Tc) | P-Channel | - | 30V | 80A (Tc) | 4.4 mOhm @ 80A, 10V | 2V @ 253µA | 160nC @ 10V | 11300pF @ 25V | 4.5V, 10V | +5V, -16V | |||
