Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI120P04P4L03AKSA1
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.4 mOhm @ 100A, 10V 2.2V @ 340µA 234nC @ 10V 15000pF @ 25V 4.5V, 10V ±16V
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.8 mOhm @ 100A, 10V 4V @ 340µA 205nC @ 10V 14790pF @ 25V 10V ±20V