- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,999
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 3.5A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 3.5A (Tc) | 1.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,435
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
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VIEW |
1,564
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 19A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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VIEW |
703
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 12A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
2,543
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 6.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 6.8A (Tc) | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
2,480
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 4A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,865
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3W (Ta), 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,981
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
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VIEW |
742
In-stock
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ON Semiconductor | MOSFET P-CH 60V 38A | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 1.65W (Ta), 65W (Tc) | P-Channel | - | 60V | 38A (Ta) | 39 mOhm @ 19A, 10V | - | 80nC @ 10V | 4360pF @ 20V | 4V, 10V | ±20V | |||
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VIEW |
2,535
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
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VIEW |
2,492
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 170W (Tc) | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | |||
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VIEW |
2,839
In-stock
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Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | |||
