Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI100P03P3L-04
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923
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Infineon Technologies MOSFET P-CH 30V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 200W (Tc) P-Channel - 30V 100A (Tc) 4.3 mOhm @ 80A, 10V 2.1V @ 475µA 200nC @ 10V 9300pF @ 25V 4.5V, 10V +5V, -16V
IPI80P03P4L07AKSA1
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3,797
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Infineon Technologies MOSFET P-CH 30V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 88W (Tc) P-Channel - 30V 80A (Tc) 7.2 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 4.5V, 10V +5V, -16V
IPI80P03P4L04AKSA1
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3,127
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Infineon Technologies MOSFET P-CH 30V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 137W (Tc) P-Channel - 30V 80A (Tc) 4.4 mOhm @ 80A, 10V 2V @ 253µA 160nC @ 10V 11300pF @ 25V 4.5V, 10V +5V, -16V
IPI45P03P4L11AKSA1
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3,279
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Infineon Technologies MOSFET P-CH 30V 45A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 58W (Tc) P-Channel - 30V 45A (Tc) 11.1 mOhm @ 45A, 10V 2V @ 85µA 55nC @ 10V 3770pF @ 25V 4.5V, 10V +5V, -16V