- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
820
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | ||||
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
3,218
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||||
VIEW |
3,748
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | ||||
VIEW |
1,850
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 18A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | ||||
VIEW |
3,899
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||||
VIEW |
3,708
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||||
VIEW |
3,969
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V |