Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP2NA90
RFQ
VIEW
RFQ
2,299
In-stock
ON Semiconductor MOSFET N-CH 900V 2.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 107W (Tc) N-Channel - 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 10V ±30V
AOT3N100
RFQ
VIEW
RFQ
733
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 1000V 2.8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 132W (Tc) N-Channel - 1000V 2.8A (Tc) 6 Ohm @ 1.5A, 10V 4.5V @ 250µA 20nC @ 10V 830pF @ 25V 10V ±30V
FQP3N25
RFQ
VIEW
RFQ
3,490
In-stock
ON Semiconductor MOSFET N-CH 250V 2.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 45W (Tc) N-Channel - 250V 2.8A (Tc) 2.2 Ohm @ 1.4A, 10V 5V @ 250µA 5.2nC @ 10V 170pF @ 25V 10V ±30V
FQP3P20
RFQ
VIEW
RFQ
2,634
In-stock
ON Semiconductor MOSFET P-CH 200V 2.8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 52W (Tc) P-Channel - 200V 2.8A (Tc) 2.7 Ohm @ 1.4A, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V